供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-02-10
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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描述
由其分销商提供的 STMicroelectronics STI40N65M2 的描述。
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package
Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STI40N65M2 N-channel MOSFET Transistor, 32 A, 650 V, 3-Pin I2PAK
250W(Tc) 25V 4V@ 250¦ÌA 56.5nC@ 10 V 1individualNChannel 650V 99m¦¸@ 16A,10V 32A 2.355nF@100V I2PAK Through hole mounting 10mm*4.4mm*8.95mm
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.355 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage650 V
Number of Elements1
Rds On Max99 mΩ
Turn-Off Delay Time96.5 ns
Turn-On Delay Time15 ns
Dimensions
Height9.35 mm
Length10.4 mm
Width4.6 mm