由其分销商提供的 Infineon IPD30N06S2L23ATMA3 的描述。
Mosfet Transistor, N Channel, 30 A, 55 V, 0.0159 Ohm, 10 V, 1.6 V
Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS Power-Transistor
Power MOSFET, N Channel, 55 V, 30 A, 23 mOhm, TO-252 (DPAK), 3 Pins, Surface Mount
MOSFET Devices; INFINEON; IPD30N06S2L23ATMA3; 55 V; 30 A; 100 W; 15.9 mOhm
55V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Infineon SCT
OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors