Infineon IRFR5305TRPBF

Name: Infineon IRFR5305TRPBF
Brand: Infineon
SKU: IRFR5305TRPBF

Transistor MOSFET P Channel 55 Volt 31 Amp 3-Pin 2+ Tab Dpak Tape and Reel

$ 0.576

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Distributor		SKU		Min	Pkg
Avnet	2	IRFR5305TRPBF	116,000	2K						0.294	3d
Newark	3	IRFR5305TRPBF	16,821	1	Cut Tape	1.690	1.120	0.789	0.789	0.789
Future Electronics	2	IRFR5305TRPBF	242,000	2K	Tape & Reel					0.375
Arrow Electronics	3	IRFR5305TRPBF	5,953	1		1.290	0.791	0.633	0.454	0.367
Rutronik		TMOSP12340	4,000	2K						0.301	16h

数据表和文档

下载 Infineon IRFR5305TRPBF 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

Datasheet11 页21 年前

Newark

RS (Formerly Allied Electronics)

Jameco

Future Electronics

库存历史记录

3 个月趋势:

+5.70%

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InfineonIRFR5305TRPBF

InfineonAUIRFR5305TR

Price @ 1000

$ 0.576

$ 1.358

Stock

4,132,899

179,910

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

-55 V

Continuous Drain Current (ID)

31 A

Threshold Voltage

-4 V

Rds On Max

65 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

89 W

110 W

Input Capacitance

1.2 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-02-19

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR5305TRPBF 的描述。

Transistor MOSFET P Channel 55 Volt 31 Amp 3-Pin 2+ Tab Dpak Tape and Reel

Jameco

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W

RS (Formerly Allied Electronics)

Power MOSFET, P Channel, 55 V, 31 A, 65 Milliohms, TO-252AA (DPAK), 3 Pins, Surface Mount

Avnet

Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

MOSFET, P CH, 55V, 31A, DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited

Farnell

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 31 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 65 / Gate-Source Voltage V = 20 / Fall Time ns = 63 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

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