价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Mouser | 726-IPD220N06L3G | 10,500 | 1 | Tape & Reel | ||||||||
| Win Source | WS-IPD220N06L3 G | 2,830 | 105 | 8h | ||||||||
| Fmall Co., Limited | IPD220N06L3 G | 40,820 | 2d | |||||||||
| UnikeyIC | IPD220N06L3 G | 1,840 | 1 | Tape & Reel | 6h | |||||||
| LCSC | C536741 | 62 | 1 | 17h |
供应链
Country of OriginAustria, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-12-09
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
LTB Date2021-12-31
LTD Date2022-06-30
相关零件
InfineonIPD30N08S2L21ATMA1
Power MOSFET, N Channel, 75 V, 30 A, 0.0159 ohm, TO-252 (DPAK), Surface Mount
InfineonIPD30N08S222ATMA1
75V, N-Ch, 21.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
InfineonIPD30N06S4L23ATMA2
Mosfet, N-Ch, 60V, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S4L23ATMA2
STMicroelectronicsSTD35P6LLF6
P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package
STMicroelectronicsSTD30N6LF6AG
Automotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFET F6 Power MOSFET in a DPAK package
描述
由其分销商提供的 Infineon IPD220N06L3 G 的描述。
Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) DPAK T/R
36W 20V 7nC@ 4.5V 1N 60V 22m¦¸@ 10V 30A 1.2nF@ 30V TO-252 , 6.5mm*6.22mm*2.3mm
OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Operating Temperature175 °C
Max Power Dissipation36 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation36 W
Rds On Max22 mΩ
Rise Time3 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time9 ns