Infineon IPD30N06S4L23ATMA2

Name: Infineon IPD30N06S4L23ATMA2
Brand: Infineon
SKU: IPD30N06S4L23ATMA2

Mosfet, N-Ch, 60V, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S4L23ATMA2

$ 0.433

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Distributor		SKU		Min	Pkg
Newark	2	IPD30N06S4L23ATMA2	5,867	5	Cut Tape		0.832	0.582	0.525	0.525
Arrow Electronics	2	IPD30N06S4L23ATMA2	1,970	1		0.301	0.301	0.301	0.301	0.301
Rochester Electronics	2	IPD30N06S4L23ATMA2	28,496					0.420	0.349	0.311	11h
DigiKey	2	IPD30N06S4L23ATMA2CT-ND	94	1	Cut Tape	1.460	0.920	0.609	0.433	0.433
Avnet		IPD30N06S4L23ATMA2	0	2500						0.288	1d

数据表和文档

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IHS

Datasheet9 页17 年前

库存历史记录

3 个月趋势:

+10.18%

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-03-23

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD30N06S4L23ATMA2 的描述。

Mosfet, N-Ch, 60V, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S4L23ATMA2

Newark

60V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V;

element14 APAC

Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon