Infineon IPB60R099CPATMA1

Name: Infineon IPB60R099CPATMA1
Brand: Infineon
SKU: IPB60R099CPATMA1

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

$ 3.512

NRND

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	IPB60R099CPATMA1	1,359	1	Cut Tape	7.570	5.130	3.860	3.860	3.860
Future Electronics	2	IPB60R099CPATMA1	1,000	1K	Tape & Reel				3.560	3.510
Rutronik		TMOSP7774	1,000	1K					4.770	4.770	4h
DigiKey	3	IPB60R099CPATMA1CT-ND	2,519	1	Cut Tape	9.190	6.223	4.541	3.825	3.825
Arrow Electronics	2	IPB60R099CPATMA1	103	1		4.912	4.190	3.346	3.346	3.346

数据表和文档

下载 Infineon IPB60R099CPATMA1 的数据表和制造商文档。

Newark

Datasheet10 页15 年前

IHS

element14 APAC

iiiC

TME

库存历史记录

3 个月趋势:

-2.20%

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InfineonIPB60R099CPATMA1

InfineonIPB60R099CPAATMA1

Price @ 1000

$ 3.512

$ 3.87

Stock

730,277

296,737

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

TO-263-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

31 A

Threshold Voltage

Rds On Max

105 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

255 W

Input Capacitance

2.8 nF

供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-12-16

Lifecycle StatusNRND (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IPB60R099CPATMA1 的描述。

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

255KW 20V 60nC@ 10V 1N 650V 99m¦¸@ 10V 2.8nF@ 100V D2PAK , 10mm*925cm*4.5mm

Unikeyic (ICkey)

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:650V; On Resistance Rds(on):99mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Package / Case:TO-263; Power Dissipation Pd:255W; Pulse Current Idm:93A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC