Infineon IPB60R125CPATMA1

Name: Infineon IPB60R125CPATMA1
Brand: Infineon
SKU: IPB60R125CPATMA1

Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK

$ 2.64

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Newark		IPB60R125CPATMA1	3,331	1		6.120	4.100	2.950	2.900	2.900
Rochester Electronics		IPB60R125CPATMA1	17,000					2.310	2.070	1.940	15h
DigiKey	2	IPB60R125CPATMA1CT-ND	1,263	1	Cut Tape	5.940	3.976	2.863	2.841	2.841
Avnet		IPB60R125CPATMA1	0	1K					2.636	2.365	17h
Farnell		IPB60R125CPATMA1	3,331	1		6.408*	4.295*	3.095*	2.509*	2.509*	1h

数据表和文档

下载 Infineon IPB60R125CPATMA1 的数据表和制造商文档。

Upverter

Datasheet10 页19 年前

IHS

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iiiC

_legacy Avnet

库存历史记录

3 个月趋势:

+13.81%

CAD 模型

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-02-06

Lifecycle StatusEOL (Last Updated: 1 week ago)

LTB Date2026-09-30

LTD Date2027-03-31

描述

由其分销商提供的 Infineon IPB60R125CPATMA1 的描述。

Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK

Verical

Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-263; Power Dissipation Pd:208W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC