价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | SIHB22N65E-GE3 | 0 | 1 | 19h | ||||||||
| Avnet | SIHB22N65E-GE3 | 0 | 1K | 1d | ||||||||
| TTI Europe | SIHB22N65E-GE3 | 0 | 1K | Tube | 1d | |||||||
| Arrow Electronics | SIHB22N65E-GE3 | 0 | 1K | |||||||||
| Farnell | SIHB22N65E-GE3 | 0 | 1 | 21h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-08
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Vishay SIHB22N65E-GE3 的描述。
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CH SINGLE 650V TO263
N-CHANNEL 650V
MOSFET, N CH, 650V, 22A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)4 V
Input Capacitance2.415 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation227 W
Rds On Max180 mΩ
Rise Time33 ns
Turn-Off Delay Time73 ns