Infineon IPB065N15N3GATMA1

Name: Infineon IPB065N15N3GATMA1
Brand: Infineon
SKU: IPB065N15N3GATMA1

Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) D2PAK T/R

$ 3.03

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IPB065N15N3GATMA1	2,000	1K					2.619	2.556	4d
Arrow Electronics	2	IPB065N15N3GATMA1	840	1		3.676	3.676	3.676	3.676	3.676
Future Electronics	2	IPB065N15N3GATMA1	1,000	1K	Tape & Reel				4.420	4.420
Rochester Electronics		IPB065N15N3GATMA1	421					2.650	2.370	2.230	16h
DigiKey	3	IPB065N15N3GATMA1CT-ND	4,431	1	Cut Tape	7.050	4.744	3.439	3.242	3.242

数据表和文档

下载 Infineon IPB065N15N3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

Farnell

iiiC

库存历史记录

3 个月趋势:

-4.47%

CAD 模型

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供应链

Country of OriginMalaysia, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-01-25

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPB065N15N3GATMA1 的描述。

Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

Semicontronic

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon

MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell