Infineon IPB072N15N3GATMA1

Name: Infineon IPB072N15N3GATMA1
Brand: Infineon
SKU: IPB072N15N3GATMA1

Power MOSFET, N Channel, 150 V, 100 A, 72 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

$ 1.434

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Distributor		SKU		Min	Pkg
Avnet	2	IPB072N15N3GATMA1	11,000	1K					1.168	1.115	5d
Newark	2	IPB072N15N3GATMA1	1,768	1	Cut Tape	2.070	2.070	2.070	2.070	2.070
Future Electronics	2	IPB072N15N3GATMA1	31,000	1K	Tape & Reel				1.390	1.350
Arrow Electronics	4	IPB072N15N3GATMA1	5,489	1		3.698	2.460	2.460	2.460	2.460
Rutronik		TMOSP8868	4,000	1K					1.520	1.220	10h

数据表和文档

下载 Infineon IPB072N15N3GATMA1 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-4.12%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-05-09

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IPB072N15N3GATMA1 的描述。

Power MOSFET, N Channel, 150 V, 100 A, 72 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

Avnet

OPTIMOS3 POWER-TRANSISTOR Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon

MOSFET, N CH, 100A, 150V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:150V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:300W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC