Infineon IRFS4115TRL7PP

Name: Infineon IRFS4115TRL7PP
Brand: Infineon
SKU: IRFS4115TRL7PP

Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7

$ 1.212

Obsolete

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		IRFS4115TRL7PP	260	1	Cut Tape	0.743	0.743	0.743	0.743	0.743
Arrow Electronics		IRFS4115TRL7PP	790	1		3.686	3.686	3.686	3.686	3.686
Avnet		IRFS4115TRL7PP	4,000	800							1d
Rochester Electronics	2	IRFS4115TRL7PP	46,327					1.880	1.680	1.580	11h
Farnell	2	IRFS4115TRL7PP	421	1	Cut Tape	3.830*	2.467*	2.194*	2.194*	2.194*	11h

数据表和文档

下载 Infineon IRFS4115TRL7PP 的数据表和制造商文档。

库存历史记录

3 个月趋势:

+82.26%

CAD 模型

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供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFS4115TRL7PP 的描述。

Single N-Channel 150 V 11.8 mOhm 110 nC HEXFET® Power Mosfet - D2PAK-7

Future Electronics

Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK T/R / MOSFET N-CH 150V 105A D2PAK-7

Win Source

150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

Infineon SCT

N CH POWER MOSFET, HEXFET, 150V, 105A, D2PAK-7; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:150V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V

Newark

Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

IHS

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon