Infineon IPB054N08N3GATMA1

Name: Infineon IPB054N08N3GATMA1
Brand: Infineon
SKU: IPB054N08N3GATMA1

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263

$ 0.905

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	IPB054N08N3GATMA1	939	1		0.855	0.839	0.839	0.839	0.839
Rochester Electronics		IPB054N08N3GATMA1	9,319					1.080	0.896	0.799	16h
DigiKey	2	IPB054N08N3GATMA1CT-ND	985	1	Cut Tape	2.910	1.877	1.289	1.038	1.038
Farnell	3	IPB054N08N3GATMA1	0	1	Cut Tape	1.894*	1.421*	1.050*	0.905*	0.888*	16h
Mouser	2	726-IPB054N08N3GATMA	1,378	1	Tape & Reel	2.630	1.710	1.170	0.914	0.914

数据表和文档

下载 Infineon IPB054N08N3GATMA1 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

iiiC

Farnell

库存历史记录

3 个月趋势:

+36.90%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-01-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IPB054N08N3GATMA1 的描述。

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263

Avnet

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon

OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC