Infineon IPB037N06N3GATMA1

Name: Infineon IPB037N06N3GATMA1
Brand: Infineon
SKU: IPB037N06N3GATMA1

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R

$ 0.789

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价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	3	IPB037N06N3GATMA1	1,990	1		0.697	0.697	0.697	0.697	0.697
Future Electronics	2	IPB037N06N3GATMA1	1,000	1K	Tape & Reel				0.745	0.705
Rochester Electronics		IPB037N06N3GATMA1	1,483					1.040	0.863	0.770	3h
DigiKey	3	IPB037N06N3GATMA1CT-ND	3,727	1	Cut Tape	2.810	1.810	1.241	0.998	0.998
Avnet		IPB037N06N3GATMA1	0	1K					0.706	0.653	3d

数据表和文档

下载 Infineon IPB037N06N3GATMA1 的数据表和制造商文档。

Farnell

Datasheet11 页15 年前

IHS

element14 APAC

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库存历史记录

3 个月趋势:

+63.84%

CAD 模型

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供应链

Country of OriginMalaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-02-29

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPB037N06N3GATMA1 的描述。

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 90A, 30V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC