Infineon IPB067N08N3GATMA1

Name: Infineon IPB067N08N3GATMA1
Brand: Infineon
SKU: IPB067N08N3GATMA1

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK

$ 1.41

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	IPB067N08N3GATMA1	0	5	Cut Tape		1.882*	1.395*	0.933*	0.899*	21h
Mouser		726-IPB067N08N3G	5	1	Tape & Reel	3.810	2.490	1.950	1.410	1.410
Component Stockers USA		IPB067N08N3GATMA1	27,149			2.890	2.400	1.910	0.840	0.950	7d
Win Source		WS-IPB067N08N3GATMA1	20	30				1.637	1.330	1.330	23h
Worldway Electronics		IPB067N08N3GATMA1	18,941	7	Tape & Reel		0.594	0.576	0.546	0.546	3h

数据表和文档

下载 Infineon IPB067N08N3GATMA1 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

Factory Futures

Arrow Electronics

iiiC

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-06-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IPB067N08N3GATMA1 的描述。

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK

Verical

IPB067N08N3G Series 80 V 80 A 7 mOhm Single N-Channel MOSFET - TO-263-3

Future Electronics

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon

Power Field-Effect Transistor, 80A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:136W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:136W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC