Infineon BSC016N03LSGATMA1

Name: Infineon BSC016N03LSGATMA1
Brand: Infineon
SKU: BSC016N03LSGATMA1

Mosfet N-ch 30V 100A TDSON8 / Trans Mosfet N-ch 30V 100A Automotive 8-PIN Tdson Ep T/r

$ 0.796

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC016N03LSGATMA1	36,502					0.944	0.783	0.698	5h
Farnell		BSC016N03LSGATMA1	0	1		2.173*	2.173*	1.701*	1.404*	1.404*	5h
Mouser	2	726-BSC016N03LSG	2,887	1	Tape & Reel	2.540	1.620	1.110	0.809	0.794
Component Stockers USA		BSC016N03LSGATMA1	15,175			0.640	0.620	0.600	0.590	0.580	7d
Win Source	2	WS-BSC016N03LS G	22,700	45				1.293	0.862	0.862	6h

数据表和文档

下载 Infineon BSC016N03LSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Farnell

_legacy Avnet

Burklin Elektronik

iiiC

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-10-24

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon BSC016N03LSGATMA1 的描述。

MOSFET N-CH 30V 100A TDSON8 / Trans MOSFET N-CH 30V 100A Automotive 8-Pin TDSON EP T/R

Win Source

MOSFET N-CH 30V 100A 125W TDSON-8 Pb-Free

ACDS

Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

PFET, 32A I(D), 30V, 0.0023OHM,

DigiKey

2.5W(Ta),125W(Tc) 20V 2.2V@ 250¦ÌA 131nC@ 10 V 1N 30V 1.6m¦¸@ 30A,10V 100A 10nF@15V TDSON-8 5.9mm*5.15mm*1.27mm

UnikeyIC

BSC016N03 - 12V-300V N-CHANNEL P

Dasenic

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC