备用零件
Price @ 1000
$ 0.726
Stock
30,887
437,714
Authorized Distributors
0
6
Mount
Through Hole
Through Hole
Case/Package
TO-251-3
TO-251
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
56 A
80 A
Threshold Voltage
-
4 V
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
140 W
140 W
Input Capacitance
3.07 nF
3.07 nF
相关零件
InfineonIRFU2405PBF
Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon AUIRFU3607 的描述。
TUBE / Automotive MOSFET 75V, 80A, 9 mOhm, 56 nC Qg, IPAK
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.07 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation140 W
Rds On Max9 mΩ
Rise Time110 ns
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height9.78 mm