Infineon IRFU1018EPBF

Name: Infineon IRFU1018EPBF
Brand: Infineon
SKU: IRFU1018EPBF

MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free

$ 0.792

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IRFU1018EPBF	763					0.644	0.534	0.476	4h
RS (Formerly Allied Electronics)	IRFU1018EPBF	0	675	Bulk				1.050	1.050	6h
Farnell	IRFU1018EPBF	0	1		0.951*	0.951*	0.670*	0.589*	0.589*	4h
Win Source	WS-IRFU1018EPBF	789	40				1.284	1.043	1.043	5h
Worldway Electronics	IRFU1018EPBF	9,898	7	Bulk		0.169	0.164	0.155	0.155	4h

数据表和文档

下载 Infineon IRFU1018EPBF 的数据表和制造商文档。

IHS

Datasheet10 页17 年前

Datasheet11 页17 年前

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2017-10-12

LTD Date2018-04-12

描述

由其分销商提供的 Infineon IRFU1018EPBF 的描述。

MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free

RS (Formerly Allied Electronics)

60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC