Infineon IRLU3636PBF

Name: Infineon IRLU3636PBF
Brand: Infineon
SKU: IRLU3636PBF

N Channel Mosfet, 60V, 99A, Ipak Trann Channel Mosfet, 60V, 99A, Ipak

$ 1.05

Obsolete

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRLU3636PBF	4,146	1		1.707	1.360	1.206	1.182	1.182
Rochester Electronics	2	IRLU3636PBF	6,533					1.270	1.050	0.940	16h
RS (Formerly Allied Electronics)		IRLU3636PBF	0	5	Bulk		2.640	2.320	2.320	2.320	7h
Farnell		IRLU3636PBF	1,712	1		1.599*	1.586*	1.559*	1.518*	1.518*	16h
Verical	2	IRLU3636PBF	3,951	8			0.865	0.865	0.865	0.865

数据表和文档

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Newark

Datasheet11 页17 年前

IHS

库存历史记录

3 个月趋势:

-4.21%

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-02-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

描述

由其分销商提供的 Infineon IRLU3636PBF 的描述。

N CHANNEL MOSFET, 60V, 99A, IPAK TranN CHANNEL MOSFET, 60V, 99A, IPAK

element14 APAC

Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-251

Future Electronics

MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, I-PAK

RS (Formerly Allied Electronics)

60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IHS

Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:99A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5.4mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:143W ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon