备用零件
Price @ 1000
$ 1.85
$ 1.135
Stock
168,683
1,681,016
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
110 A
110 A
Threshold Voltage
2 V
4 V
Rds On Max
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
150 W
Input Capacitance
4 nF
4 nF
相关零件
InfineonIRFP064NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 110A;TO-247AC;PD 200W;VGS +/-20V
InfineonIRFP054NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS +/-20V
描述
由其分销商提供的 Infineon AUIRFP064N 的描述。
AUIRFP064N Series 55 V 110 A 0.008 Ohm HEXFET® Power MOSFET - TO-247AC
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(3+Tab) TO-247AC Tube
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: HVAC Linear Drive
MOSFET, N CH, 55V, 110A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity400
Power Dissipation200 W
Rds On Max8 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm