Infineon IRFP054NPBF

Name: Infineon IRFP054NPBF
Brand: Infineon
SKU: IRFP054NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.012 Ohm; Id 81A; TO-247AC; Pd 170W; Vgs +/-20V

$ 1.27

NRND

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Avnet	IRFP054NPBF	1,675	800					1.174	1.074	22h
Newark	IRFP054NPBF	885	1		3.460	2.510	1.580	1.330	1.180
Arrow Electronics	IRFP054NPBF	1,411	1		1.057	1.057	1.057	1.057	1.057
Rochester Electronics	IRFP054NPBF	4,967					1.510	1.250	1.120	20h
RS (Formerly Allied Electronics)	IRFP054NPBF	0	1	Bulk	3.700	3.260	3.260	3.260	3.260	12h

数据表和文档

下载 Infineon IRFP054NPBF 的数据表和制造商文档。

Newark

Datasheet10 页21 年前

Datasheet9 页21 年前

IHS

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

+21.83%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-12-01

Lifecycle StatusNRND (Last Updated: 3 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

描述

由其分销商提供的 Infineon IRFP054NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS +/-20V

RS (Formerly Allied Electronics)

Power MOSFET, General Purpose, N Channel, 55 V, 72 A, 0.012 ohm, TO-247AC, Through Hole

Avnet

Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:81A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon