Infineon IRFP3306PBF

Name: Infineon IRFP3306PBF
Brand: Infineon
SKU: IRFP3306PBF

Single N-Channel 60 V 4.2 mOhm 120 nC HEXFET® Power Mosfet - TO-247AC

$ 1.384

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Distributor		SKU		Min	Pkg
Rutronik		TMOSP12215	9,600	400					1.097	1.097	8h
Rochester Electronics		IRFP3306PBF	241					1.470	1.320	1.240	1h
Future Electronics	2	IRFP3306PBF	0	10	Tube		2.630	2.590	2.530	2.460
RS (Formerly Allied Electronics)		IRFP3306PBF	0	2	Bulk		2.880	2.760	2.760	2.760	17h
Avnet	2	08N6351	0	1		2.850	2.520	1.920	1.640	1.640	3h

数据表和文档

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Newark

Datasheet8 页18 年前

Datasheet9 页18 年前

库存历史记录

3 个月趋势:

+0.16%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-03-03

Lifecycle StatusProduction (Last Updated: 3 months ago)

LTB Date2026-05-31

LTD Date2026-11-30

描述

由其分销商提供的 Infineon IRFP3306PBF 的描述。

Single N-Channel 60 V 4.2 mOhm 120 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

MOSFET, N Ch., 60V, 160A, 4.2 MOHM, 85 NC QG, TO-247AC, Pb-Free

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 60 V, 120 A, 0.0033 ohm, TO-247AC, Through Hole

Avnet

MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:220W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:160A; Package / Case:TO-247AC; Power Dissipation Pd:220W; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon