Infineon 2N6802

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Production

价格与库存

数据表和文档

下载 Infineon 2N6802 的数据表和制造商文档。

IHS

Datasheet5 页28 年前

element14 APAC

Farnell

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon 2N6802 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

备用零件

Price @ 1000
$ 18.42
$ 18.42
Stock
650
9,407
9,407
Authorized Distributors
1
2
2
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-39
TO-39
TO-39
Drain to Source Voltage (Vdss)
500 V
500 V
500 V
Continuous Drain Current (ID)
2.5 A
2.5 A
2.5 A
Threshold Voltage
4 V
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
25 W
25 W
25 W
Input Capacitance
-
-
-

供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

相关零件

InfineonIRFF130
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Infineon2N6796
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
InfineonIRFF430
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Infineon2N6800
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
InfineonIRFF120
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
InfineonJANTX2N6796
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

描述

由其分销商提供的 Infineon 2N6802 的描述。

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:2.5A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AF ;RoHS Compliant: No
N CH MOSFET, 500V, 2.5A, TO-205AF; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:0.35mJ; Current Id Max:2.5A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:11A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.097kg

制造商别名

Infineon 在全球拥有多个品牌,分销商可将其用作替代名称。Infineon 也可称为以下名称:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA