MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:8.6A; Cont Current Id N Channel 3:6.3A; Current Id Max:8.6A; No. of Transistors:2; On State Resistance Channel 1:15mohm; On State Resistance N Channel 2:28mohm; Package / Case:SOIC; Power Dissipation N Channel 2:2W; Power Dissipation N Channel 3:2W; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:30A; Pulse Current Idm N Channel 3:20A; SMD Marking:FDS6982; Termination Type:SMD; Voltage Vds N Channel 1:30V; Voltage Vds N Channel 2:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th N Channel 1 Min:3V; Voltage Vgs th N Channel 2 Min:3V
This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench® MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction losses (less than 20mW at VGS = 4.5V).
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