onsemi FDS6900AS

Transistor MOSFET Array Dual N-CH 30V 8.2A/6.9A 8-Pin SOIC T/R
$ 0.618
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDS6900AS.

IHS

Datasheet11 páginas4 anos atrás
Datasheet10 páginas21 anos atrás

onsemi

Farnell

Fairchild Semiconductor

iiiC

Histórico de estoque

Tendência de 3 meses:
+0.00%

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Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-03-29
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descrições

Descrições de onsemi FDS6900AS fornecidas pelos seus distribuidores.

Transistor MOSFET Array Dual N-CH 30V 8.2A/6.9A 8-Pin SOIC T/R
Dual N-Channel PowerTrench® SyncFET™ 30V
008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Power Field-Effect Transistor, 8.2A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SO8, DUAL NCH, POWER TRENCH SYNCFET
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET, DUAL, N, SMD, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:6.9A; Current, Id Cont N Channel 3:8.2A; Current, Idm Pulse N Channel 2:20A; Current, Idm Pulse N Channel 3:30A; No. of Pins:8; Power Dissipation:2W; Resistance, Rds on N Channel 1:0.027ohm; Resistance, Rds on N Channel 2:0.022ohm; Transistors, No. of:1; Voltage, Vds Max:30V
The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • FDS6900AS.