onsemi FCP11N60F
$ 1.669
Production
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Histórico de estoque
Tendência de 3 meses: -11.95%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FCP11N60F.
Modelos CAD
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Price @ 1000
$ 1.669
$ 1.246
$ 1.246
Stock
206,261
1,253,745
1,253,745
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220
TO-220
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
5 V
-
-
Rds On Max
380 mΩ
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
30 V
20 V
20 V
Power Dissipation
125 W
125 W
125 W
Input Capacitance
1.49 nF
1.2 nF
1.2 nF
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrições
Descrições de onsemi FCP11N60F fornecidas pelos seus distribuidores.
N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:33A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @TJ = 150C Typ. RDS(on) = 0.32W Fast Recovery Type (trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: -11.95%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.49 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Number of Outputs1
PackagingBulk
Power Dissipation125 W
Quiescent Current100 µA
Rds On Max380 mΩ
Resistance380 MΩ
Rise Time98 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time119 ns
Turn-On Delay Time34 ns
Voltage Rating (DC)600 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FCP11N60F.
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declarações de conformidade