Infineon IRFS4410ZPBF
$ 3.38
Obsolete
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Distribuidores de estoque não autorizados
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Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 3.38
$ 0.946
Stock
505,993
677,757
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
97 A
97 A
Threshold Voltage
4 V
-
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
230 W
230 W
Input Capacitance
4.82 nF
4.82 nF
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
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STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
Descrições
Descrições de Infineon IRFS4410ZPBF fornecidas pelos seus distribuidores.
IRFS4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin D2PAK
Single N-Channel 100 V 9 mOhm 83 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 230 W
Trans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 100V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:97A; Package / Case:D2-PAK; Power Dissipation Pd:230W; Pulse Current Idm:390A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max9 mΩ
Recovery Time57 ns
Resistance9 MΩ
Rise Time52 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height4.83 mm
Length10.668 mm
Width9.65 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declarações de conformidade