Infineon IRF1407STRLPBF

MOSFET N-CH 75V 100A D2PAK "N-Channel 75 V 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK"

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK

Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK

Power MOSFET, N Channel, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Surface Mount

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Trans MOSFET N-CH 75V 100A 3-Pin (2+Tab) D2PAK T/R

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V