Nexperia PMDPB30XN,115
$ 0.275
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Inventory History
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CAD Models
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Datasheets & Documents
Download datasheets and manufacturer documentation for Nexperia PMDPB30XN,115.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-06
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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Descriptions
Descriptions of Nexperia PMDPB30XN,115 provided by its distributors.
Small Signal Field-Effect Transistor, 4A I(D), N-Channel, Metal-oxide Semiconductor FET
Transistor MOSFET Array Dual N-CH 20V 5.3A 8-Pin DFN2020-6 T/R
PMDPB30XN Series 20 V 40 mOhm 490 mW Dual N-Channel TrenchMOS FET - DFN-2020-6
MOSFET, DUAL N-CH, 20V, DFN2020; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.3A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 65
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV; Power Dissipation:8.33W; No. of Pins:6Pins RoHS Compliant: Yes
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals6
Technical
Continuous Drain Current (ID)4 A
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)650 mV
Input Capacitance660 pF
Max Operating Temperature150 °C
Max Power Dissipation8.33 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingDigi-Reel®
Rds On Max40 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time4 ns
Turn-On Delay Time40 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Nexperia PMDPB30XN,115.
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements