Vishay IRFI530GPBF
$ 0.89
Production
Inventory History
3 month trend: +935%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
Related Parts
InfineonIRFI530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.11Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55de
InfineonIRLI530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55deg
Descriptions
Descriptions of Vishay IRFI530GPBF provided by its distributors.
Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 100V 9.7A TO220-3
MOSFET N-CHANNEL 100V
NCHAN, TO-220F, 100V, 9.7A
N-CH SINGLE 100V TO220
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +935%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance670 pF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation42 W
Rds On Max160 mΩ
Rise Time28 ns
Turn-Off Delay Time34 ns
Turn-On Delay Time8.5 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements