Vishay IRFD220PBF

Name: Vishay IRFD220PBF
Brand: Vishay
SKU: IRFD220PBF

Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4

$ 0.695

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
TTI	IRFD220PBF	0	100				0.709	0.709	0.709	7h
RS (Formerly Allied Electronics)	IRFD220PBF	0	1	Bulk	0.770	0.680	0.680	0.680	0.680	6h
Farnell	IRFD220PBF	0	1		0.851*	0.653*	0.558*	0.558*	0.558*	5h
element14 APAC	IRFD220PBF	0	1		1.164*	0.843*	0.664*	0.375*	0.350*	1d
Microchip USA	IRFD220PBF	1,426	600	Bulk				1.800	1.800	7d

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRFD220PBF.

JRH Electronics

Datasheet9 pages4 years ago

Newark

element14 APAC

element14

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-100%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-09-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-18

LTD Date2025-05-18

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Descriptions

Descriptions of Vishay IRFD220PBF provided by its distributors.

Single N-Channel 200 V 0.8 Ohms Through Hole Power Mosfet - HVMDIP-4

Future Electronics

MOSFET N-CH 200V 800MA 4-DIP | Siliconix / Vishay IRFD220PBF

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 200V 0.8A 4-Pin HexDIP

Verical

POWER MOSFET Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

N Channel Mosfet, 200V, 800Ma, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:800Ma; On Resistance Rds(On):0.8Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

Newark

MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:800mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:6.4A; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC