STMicroelectronics STW18N60DM2

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
$ 1.27
EOL
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
Arrow ElectronicsSTW18N60DM21,200600
VericalSTW18N60DM21,200600
TME
2
STW18N60DM21201
1d
DigiKey497-16340-5-ND4731Tube
AvnetSTW18N60DM20600
13h

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics STW18N60DM2.

Newark

Datasheet12 pages10 years ago
Datasheet12 pages10 years ago

Inventory History

3 month trend:
+44.05%
Powered bySpectra logo

CAD Models

Download STMicroelectronics STW18N60DM2 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-01-28
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-10
LTD Date2027-03-10

Related Parts

InfineonIPW60R280P6FKSA1
MOSFET Transistor, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
Details
InfineonIPW65R280C6FKSA1
Transistor MOSFET N-CH 700V 13.8A 3-Pin TO-247 Tube
Details
STMicroelectronicsSTW13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package
Details
STMicroelectronicsSTW14NK50Z
N-Channel 500V - 0.34 Ohm - 14A TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
Details
STMicroelectronicsSTW13NK60Z
N-Channel 600 V, 0.48 Ohm, 13 A, TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
Details
InfineonIPW60R330P6FKSA1
N-Channel 600 V 12 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-247
Details

Descriptions

Descriptions of STMicroelectronics STW18N60DM2 provided by its distributors.

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
STMicroelectronics
MOSFET N-CH 600V 12A TO247 / N-Channel 600 V 12A (Tc) 90W (Tc) Through Hole TO-247-3
Win Source
Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IHS
Mosfet, N-Ch, 600V, 12A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STW18N60DM2
Newark

Images

Newark
TME
RS
Lanka Micro
Future Electronics

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics