STMicroelectronics STP240N10F7
$ 2.241
Production
Inventory History
3 month trend: -8.57%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download STMicroelectronics STP240N10F7 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | Footprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Related Parts
onsemiFDP027N08B-F102
N-Channel 80 V 2.7 mOhm 178 nC Flange Mount Power Trench Mosfet - TO-220
STMicroelectronicsSTP310N10F7
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
InfineonIPP030N10N5AKSA1
IPP030N10N5 Series 100 V 120 A OptiMOS 5 Power Transistor MOSFET - TO-220-3, PG-TO220-3, RoHS
Descriptions
Descriptions of STMicroelectronics STP240N10F7 provided by its distributors.
N-channel 100 V, 2.85 mOhm typ., 110 A STripFET F7 Power MOSFET in a TO-220 package
STP240N10F7 N-CHANNEL MOSFET TRANSISTOR, 110 A, 100 V, 3-PIN TO-220
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 110A I(D), 100V, 0.0032ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube DeepGate, STripFETseries, Vds=100 V, 110 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N-CH, 100V, 110A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.00285ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -8.57%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.6 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3.2 mΩ
Rise Time108 ns
Schedule B8541290080
Turn-Off Delay Time148 ns
Turn-On Delay Time62 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant