STMicroelectronics STP11N65M5
$ 0.896
Production
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Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11N65M5.
CAD Models
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Related Parts
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N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220 package
STMicroelectronicsSTP13N65M2
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package
STMicroelectronicsSTP13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package
Descriptions
Descriptions of STMicroelectronics STP11N65M5 provided by its distributors.
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in TO-220 package
N-Channel 650 V 9 A 0.48 Ohm Flange Mount MDmesh V Power Mosfet - TO-220
STP11N65M5 N-CHANNEL MOSFET TRANSISTOR, 9 A, 710 V, 3-PIN TO-220
Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-220AB Tube
Mosfet, N-Ch, 650V, 9A, To-220 Rohs Compliant: Yes |Stmicroelectronics STP11N65M5
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages | MOSFET N CH 650V 9A TO-220
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance644 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation85 W
Rds On Max480 mΩ
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time23 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant