STMicroelectronics STP10N60M2
$ 0.741
EOL
Inventory History
3 month trend: -4.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP10N60M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-29
Lifecycle StatusEOL (Last Updated: 4 weeks ago)
LTB Date2027-02-19
LTD Date2027-08-19
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Descriptions
Descriptions of STMicroelectronics STP10N60M2 provided by its distributors.
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package
STP10N60M2 N-CHANNEL MOSFET TRANSISTOR, 7.5 A, 650 V, 3-PIN TO-220
STMicroelectronics N-Channel MOSFET MDmesh M2, Vds=650V 7.5A TO-220 TH 3-Pin
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Tube
N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3
Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 7.5A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltag; Available until stocks are exhausted
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -4.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time13.2 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max600 mΩ
Resistance600 mΩ
Rise Time8 ns
Turn-Off Delay Time32.5 ns
Turn-On Delay Time8.8 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP10N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant