STMicroelectronics STF13NM60ND
$ 1.936
Obsolete
Inventory History
3 month trend: +11.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF13NM60ND.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-16
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2026-09-10
LTD Date2027-03-10
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N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTF14NM50N
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220FP package
VishaySIHF12N60E-GE3
33W(Tc) 30V 4V@250µA 58nC@10V N-Ch MOSFET 600V 380mΩ@6A,10V 12A 937pF@100V TO-220 TH 16.12mm H
Descriptions
Descriptions of STMicroelectronics STF13NM60ND provided by its distributors.
STF13NM60ND N-channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-220FP
N-Ch MOSFET, 600V, 11A, 380mΩ@5.5A,10V, 25W(Tc), 24.5nC@10V, 845pF@50V, TO-220FP, TH, 4.6mm W
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
Power MOSFET, N Channel, 600 V, 11 A, 0.32 ohm, TO-220FP, Through Hole
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
Mosfet, N-Ch, 600V, 11A, 150Deg C, 25W; |Stmicroelectronics STF13NM60ND
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 11A, 150DEG C, 25W; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +11.68%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time15.4 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance845 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max380 mΩ
Rise Time10 ns
Turn-Off Delay Time9.6 ns
Turn-On Delay Time46.5 ns
Dimensions
Height16.4 mm
Length10.6 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF13NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant