STMicroelectronics STB34N50DM2AG
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB34N50DM2AG | 0 | 1 | Cut Tape | 14h | |||||||
| Microchip USA | STB34N50DM2AG | 1,689 | 600 | 7h | ||||||||
| Component Stockers USA | STB34N50DM2AG | 12,663 | >1wk | |||||||||
| Win Source | WS-STB34N50DM2AG | 6,970 | 11 | 15h | ||||||||
| Worldway Electronics | STB34N50DM2AG | 7,748 | 7 | Tape & Reel | 14h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB34N50DM2AG.
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Descriptions
Descriptions of STMicroelectronics STB34N50DM2AG provided by its distributors.
Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package
Automotive Power Discrete, 500V, 26A, D2PAK, Tape and Reel
STMicroelectronics SCT
Hv Mosfet Mdmesh |Stmicroelectronics STB34N50DM2AG
190W(Tc) 25V 5V@ 250¦ÌA 44nC@ 10 V 1N 500V 120m¦¸@ 12.5A,10V 26A 1.85nF@100V TO-263 10.4mm*9.35mm*4.6mm
Power Field-Effect Transistor, 26A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-channel MDmesh >350 V to 700 V
MOSFET, N-CH, 500V, 26A, TO263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (17-Dec-2015)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)26 A
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)500 V
Input Capacitance1.85 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation190 W
Rds On Max120 mΩ
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB34N50DM2AG.
Compliance
Environmental Classification
China RoHSNon-Compliant
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant