STMicroelectronics STB18N65M5
$ 1.38
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Inventory History
3 month trend: +90.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB18N65M5.
CAD Models
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VishaySIHB15N60E-GE3
Vishay NChannelMOSTube, Vds=600 V, 15 A, D2PAK （TO-263）encapsulation, surface mount
Descriptions
Descriptions of STMicroelectronics STB18N65M5 provided by its distributors.
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in D2PAK package
STB18N65M5 N-channel MOSFET Transistor, 15 A, 710 V, 3-Pin D2PAK
N-Channel 650 V 0.22 Ohm 31 nC 110 W Silicon SMT Mosfet - TO-263
Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) D2PAK T/R
N-Ch MOSFET, 650V, 15A, 220mΩ@7.5A,10V, 110W(Tc), 25V, 5V@250µA, 31nC@10V, 1.24nF@100V, D2PAK/TO-263, SMD, 10.4mm(L) × 9.35mm(W)
Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMICROELECTRONICS - STM32F410CBU6 - ARM MCU, Dynamic Efficiency, STM32 Family STM32F4 Series Microcontrollers, ARM Cortex-M4, 32bit
MOSFET, N-CH, 650V, 15A, 110W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.198ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +90.38%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.24 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max220 mΩ
Resistance220 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time9 ns
Turn-On Delay Time36 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB18N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant