STMicroelectronics STB18N60M2
$ 1.09
Production
Price and Stock
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Min
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Inventory History
3 month trend: +0.69%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB18N60M2.
CAD Models
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Related Parts
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N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package
VishaySIHB15N60E-GE3
Vishay NChannelMOSTube, Vds=600 V, 15 A, D2PAK （TO-263）encapsulation, surface mount
Descriptions
Descriptions of STMicroelectronics STB18N60M2 provided by its distributors.
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package
STB18N60M2 N-CHANNEL MOSFET TRANSISTOR, 13 A, 650 V, 3-PIN D2PAK
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK T/R
STB18 Series 600 V 13 A 280 mOhm 110 W 21.5 nC N-Channel MOSFET - D2PAK
Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh M2series, Vds=650 V, 13 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.69%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Resistance280 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance791 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation110 W
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time9 ns
Turn-Off Delay Time47 ns
Turn-On Delay Time12 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB18N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant