STMicroelectronics SCT10N120

Name: STMicroelectronics SCT10N120
Brand: STMicroelectronics
SKU: SCT10N120

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

$ 6.709

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark		SCT10N120	209	1		7.370	7.370	7.370	7.370	7.370
Verical		SCT10N120	10	10			6.709	6.709	6.709	6.709
TME	2	SCT10N120	56	1		9.720	8.850	8.850	8.850	8.850	17h
Avnet		SCT10N120	0	600					4.175	4.022	5d
Future Electronics		SCT10N120	0	30	Tube			4.420	4.260	4.190

Inventory History

3 month trend: -16.98%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics SCT10N120.

Future Electronics

Datasheet14 pages9 years ago

Inventory History

3 month trend:

-16.98%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-05-25

Lifecycle StatusObsolete (Last Updated: 2 months ago)

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Descriptions

Descriptions of STMicroelectronics SCT10N120 provided by its distributors.

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

STMicroelectronics

N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247

Future Electronics

Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube

Verical

Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247

Avnet

Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

IHS

SIC MOSFET, N-CH, 1.2KV, 12A, HIP247-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:150W RoHS Compliant: Yes

Newark

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Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names: