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STMicroelectronics SCT10N120

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
$ 6.761
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics SCT10N120.

Future Electronics

Datasheet14 pages10 years ago

Inventory History

3 month trend:
-100%

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-05-25
Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descriptions

Descriptions of STMicroelectronics SCT10N120 provided by its distributors.

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics