Vishay IRFPG50PBF

Name: Vishay IRFPG50PBF
Brand: Vishay
SKU: IRFPG50PBF

IRFPG50PBF N-channel Mosfet Transistor, 6.1 A, 1000 V, 3-PIN TO-247AC

$ 2.422

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Distributor		SKU		Min	Pkg
Newark	2	IRFPG50PBF	1,000	1		7.340	7.000	4.970	4.250	4.250
Arrow Electronics	2	IRFPG50PBF	2,115	1		7.308	4.124	3.481	2.879	2.879
Verical	3	IRFPG50PBF	888	20				2.842	2.422	2.422
Future Electronics		IRFPG50PBF	2,146	10	Tube		2.410	2.370	2.310	2.250
Rutronik		HVMOS1246	250	25				1.990	1.790	1.790	1h

Inventory History

3 month trend: -23.86%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRFPG50PBF.

Upverter

Datasheet11 pages3 years ago

Technical Drawing3 pages31 years ago

Newark

IHS

element14 APAC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-23.86%

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Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-10-31

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRFPG50PBF provided by its distributors.

IRFPG50PBF N-CHANNEL MOSFET TRANSISTOR, 6.1 A, 1000 V, 3-PIN TO-247AC

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 1KV 6.1A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 1000V 6.1A TO-247AC

Win Source

Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

IHS

N CHANNEL MOSFET, 1KV, 6.1A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:6.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Newark

MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V

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