STMicroelectronics MJD31CT4
$ 0.423
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD31CT4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.423
$ 0.329
$ 0.329
Stock
3,873,804
10,621,550
10,621,550
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
TO-252
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
3 A
3 A
3 A
Transition Frequency
-
3 MHz
3 MHz
Collector Emitter Saturation Voltage
1.2 V
-
-
hFE Min
10
10
10
Power Dissipation
15 W
1.56 W
1.56 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-05-31
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
Diodes Inc.ZXTN4004KTC
Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 3.8 W, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions of STMicroelectronics MJD31CT4 provided by its distributors.
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount
TRANSISTOR, BIPOLAR, SI, NPN, AMPLIFIER, POWER, VCEO 100V, IC 3A, PD 15W, TO-252,HFE 50
Bipolar Transistors (BJT); MJD31CT4; STMICROELECTRONICS; NPN; 3; 100 V; 3 A
Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2+Tab) DPAK T/R
LOW VOLTAGE NPN POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and Reel
STMicroelectronics SCT
STMicroelectronics NPNTransistor, DPAK (TO-252)encapsulation, SMD mount, Maximum DC collector current3 A, maximum collector-emission voltage100 V
TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min10
Max Breakdown Voltage100 V
Max Collector Current3 A
Max Operating Temperature150 °C
Max Power Dissipation15 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation15 W
Schedule B8541290080
Voltage Rating (DC)100 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD31CT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant