STMicroelectronics MJD3055T4
$ 0.474
Production
Inventory History
3 month trend: -19.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD3055T4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.474
$ 0.333
$ 0.333
Stock
1,158,752
1,033,839
1,033,839
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
TO-252
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
60 V
Max Collector Current
10 A
10 A
10 A
Transition Frequency
2 MHz
2 MHz
2 MHz
Collector Emitter Saturation Voltage
8 V
1.1 V
1.1 V
hFE Min
5
5
5
Power Dissipation
20 W
1.75 W
1.75 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
Diodes Inc.ZXTN4004KTC
Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 3.8 W, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions of STMicroelectronics MJD3055T4 provided by its distributors.
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 20 W, TO-252 (DPAK), Surface Mount
Trans GP BJT NPN 60V 10A 20000mW 3-Pin(2+Tab) DPAK T/R
MJD3055 Series NPN 60 V 10 A SMT Complementary Power Transistor - TO-252-3
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
MJD3055T4 NPN BIPOLAR TRANSISTOR, 10 A, 60 V, 3-PIN DPAK
TRANSISTOR, BJT, NPN, 60V, 10A, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -19.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)70 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage8 V
Collector Emitter Voltage (VCEO)60 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency2 MHz
Gain Bandwidth Product2 MHz
hFE Min5
Max Breakdown Voltage60 V
Max Collector Current10 A
Max Frequency2 MHz
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation20 W
Schedule B8541290080
Transition Frequency2 MHz
Voltage Rating (DC)60 V
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD3055T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant