STMicroelectronics MJD117T4
$ 0.339
Production
Inventory History
3 month trend: -16.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD117T4.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.339
$ 0.367
$ 0.367
Stock
485,079
305,111
305,111
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
DPAK
DPAK
DPAK
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-100 V
100 V
100 V
Max Collector Current
2 A
2 A
2 A
Transition Frequency
25 MHz
25 MHz
25 MHz
Collector Emitter Saturation Voltage
3 V
2 V
2 V
hFE Min
200
200
200
Power Dissipation
20 W
20 W
20 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
Diodes Inc.ZXTN4004KTC
Bipolar (BJT) Single Transistor, NPN, 150 V, 1 A, 3.8 W, TO-252 (DPAK), Surface Mount
Descriptions
Descriptions of STMicroelectronics MJD117T4 provided by its distributors.
MJD117 Series 100 V 2 A PNP Complementary Power Darlington Transistor - TO-252-3
COMPLEMENTARY POWER DARLINGTON TRANSISTOR Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Trans Darlington PNP 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R
MJD117T4 PNP DARLINGTON TRANSISTOR, 4 A 100 V HFE:200, 3-PIN TO-252
TRANSISTOR, BJT, PNP, -100V, -2A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: -2A; DC Current Gain hFE: 200hFE; Tran
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -16.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage-100 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)100 V
Current Rating-2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product25 MHz
hFE Min200
Max Breakdown Voltage100 V
Max Collector Current2 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation20 W
Schedule B8541290080
Transition Frequency25 MHz
Voltage Rating (DC)-100 V
Dimensions
Height2.63 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics MJD117T4.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant