STMicroelectronics BD681
$ 0.349
Production
Inventory History
3 month trend: -18.97%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics BD681.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.349
$ 0.457
$ 0.457
Stock
2,054,541
656,753
656,753
Authorized Distributors
6
6
6
Mount
Through Hole
-
-
Case/Package
SOT-32
TO-225
TO-225
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
4 A
4 A
4 A
Transition Frequency
10 MHz
-
-
Collector Emitter Saturation Voltage
2.5 V
2.5 V
2.5 V
hFE Min
750
750
750
Power Dissipation
40 W
40 W
40 W
Supply Chain
Country of OriginIndia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Descriptions
Descriptions of STMicroelectronics BD681 provided by its distributors.
Bipolar junction transistor, NPN, 4 A, 100 ## Fehler ##, THT, TO-126, BD681
Transistor: NPN; bipolar; 100V; 4A; 40W; -65+150 deg.C; THT; TO126
TRANSISTOR, DARLINGTON, NPN, POWER, SWITCH, VO 100V, VI 5V, IO 4A, PD 40W, SOT-32
COMPLEMENTARY POWER DARLINGTON TRANSISTOR Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 80 V 4 A Complementary Power Darlington Transistor - SOT-32
Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-225 Box / TRANS NPN DARL 100V 4A SOT-32
DARLINGTON TRANS, NPN, 100V, 4A, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:40W; DC Collector Current:4A; RF Transistor Case:SOT-32; No. of Pins:3Pins; DC Current Gain hFE:750hFE RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -18.97%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min750
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation40 W
Transition Frequency10 MHz
Voltage Rating (DC)100 V
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics BD681.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant