ROHM RQ3E100GNTB
$ 0.226
Production
Inventory History
3 month trend: +53.33%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
Download ROHM RQ3E100GNTB symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | SymbolFootprint | 3D | Download |
 Ultra Librarian | SymbolFootprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-04
Lifecycle StatusProduction (Last Updated: 9 months ago)
Related Parts
InfineonIRFHM8334TRPBF
Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Diodes Inc.DMG7430LFG-7
DMG7430LFG Series 30 V 11 mOhm N-Channel Enhancement Mode Mosfet -POWERDI®3333-8
Diodes Inc.DMG4406LSS-13
Single N-Channel 30 V 2 W 12.5 nC Silicon Surface Mount Mosfet - SOIC-8
Descriptions
Descriptions of ROHM RQ3E100GNTB provided by its distributors.
MOSFET 30V 10A 11.7mΩ@10A,10V 420pF@15V HSMT-8 SMD 850μm H
Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R
Power Field-Effect Transistor, 10A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
4.5V DRIVE NCH MOSFET, HSMT8, NCH, DISCRETE
MOSFET, N-CH, 30V, 21A, HSMT-8;
MOSFET, N-CH, 30V, 21A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 15W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Manufacturer Aliases
ROHM has several brands around the world that distributors may use as alternate names. ROHM may also be known as the following names:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
Inventory History
3 month trend: +53.33%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15.7 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time3.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance420 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max11.7 mΩ
Rise Time4.3 ns
Turn-Off Delay Time22.4 ns
Turn-On Delay Time8.4 ns