ROHM RK7002BMT116

Name: ROHM RK7002BMT116
Brand: ROHM
SKU: RK7002BMT116

N-Channel 60 V 0.2 W Surface Mount 2.5 V Drive Silicon Power Mosfet - SOT-23

$ 0.048

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
CoreStaff		ST49019755	80,414	1		0.063	0.063	0.063	0.048	0.041	16h
Verical	3	RK7002BMT116	2,870	61				0.048	0.042	0.020
Arrow Electronics		RK7002BMT116	2,870	1		0.164	0.076	0.048	0.042	0.042
DigiKey	3	RK7002BMT116CT-ND	18,229	1	Cut Tape	0.200	0.121	0.075	0.048	0.048
TME	2	RK7002BMT116	593	1		0.150	0.091	0.055	0.036	0.029	20h

Inventory History

3 month trend: -0.33%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM RK7002BMT116.

IHS

Datasheet14 pages3 years ago

Newark

Future Electronics

Inventory History

3 month trend:

-0.33%

CAD Models

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Alternate Parts

This Part

Alternate Parts

ROHMRK7002BMT116

ROHMRK7002BT116

Price @ 1000

$ 0.048

$ 0.062

Stock

8,591,904

1,403,111

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-236-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

250 mA

Threshold Voltage

Rds On Max

2.4 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 mW

Input Capacitance

15 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-11-15

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of ROHM RK7002BMT116 provided by its distributors.

N-Channel 60 V 0.2 W Surface Mount 2.5 V Drive Silicon Power Mosfet - SOT-23

Future Electronics

60V 250mA 200mW 2.4Ω@10V,250mA 2.3V@1mA N Channel SOT-23 MOSFETs ROHS

HQonline

Trans MOSFET N-CH 60V ±0.25A 3-Pin SOT-23 T/R

Avnet Japan

ROHM NMOS RK7002BM, Vds=60 V, 250 mA, SOT-23, , 3

UnikeyIC

Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:250mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:350mW; No. of Pins:3Pins RoHS Compliant: Yes

Newark