ROHM QH8MA3TCR

Name: ROHM QH8MA3TCR
Brand: ROHM
SKU: QH8MA3TCR

Trans MOSFET N-CH/P-CH 30V±7A@N Channel/±5.5A@P Channel 8-Pin TSMT Emboss T/R

$ 0.354

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
CoreStaff		ST50012778	2,759	1		0.255	0.255	0.219	0.163	0.157	15h
Verical	2	QH8MA3TCR	2,759	296					0.247	0.240
Arrow Electronics		QH8MA3TCR	92	1		0.832	0.560	0.560	0.560	0.560
DigiKey	2	QH8MA3TCRCT-ND	1,877	1	Cut Tape	1.240	0.780	0.512	0.360	0.360
Newark		QH8MA3TCR	2,170	1	Cut Tape	1.190	0.751	0.493	0.347	0.347

Inventory History

3 month trend: -3.42%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM QH8MA3TCR.

Newark

Datasheet20 pages11 years ago

Datasheet20 pages10 years ago

Rohm SCT

Inventory History

3 month trend:

-3.42%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-02-13

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of ROHM QH8MA3TCR provided by its distributors.

Trans MOSFET N-CH/P-CH 30V±7A@N Channel/±5.5A@P Channel 8-Pin TSMT Emboss T/R

Avnet Japan

Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

ROHM N/PMOS, Vds=30 V, 7 A, TSMT8, , 8

UnikeyIC

MOSFET, N AND P-CH, 30V, 7A, TSMT; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: TSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Farnell