ROHM 2SD2212T100

Name: ROHM 2SD2212T100
Brand: ROHM
SKU: 2SD2212T100

Power Bipolar Transistor, 2A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

$ 0.231

NRND

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Distributor	SKU		Min	Pkg
Future Electronics	2SD2212T100	0	1K	Tape & Reel				0.200	0.192
Arrow Electronics	2SD2212T100	0	1K					0.231	0.218
Farnell	2SD2212T100	0	1		0.835*	0.835*	0.458*	0.249*	0.174*	6h
Microchip USA	2SD2212T100	2,350	3K	Tray					0.904	7d
Win Source	WS-2SD2212T100	21,000	385					0.125	0.102	6h

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Datasheets & Documents

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IHS

Datasheet4 pages21 years ago

Newark

Farnell

Future Electronics

iiiC

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-05-01

Lifecycle StatusNRND (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of ROHM 2SD2212T100 provided by its distributors.

Power Bipolar Transistor, 2A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

Trans Darlington NPN 70V 2A 2000mW 4-Pin(3+Tab) MPT T/R / TRANS NPN DARL 60V 2A SOT-89

Win Source

2SD2212 Series 60 V 2 A SMT NPN Medium Power Transistor -SC-62

Future Electronics

NPN TRANSISTOR 60V 2A 2W MPT3 RoHSconf

Rutronik

TRANSISTOR SOT-89;BCE NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:80MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1A; Gain Bandwidth ft Typ:80MHz; Hfe Min:1000; Package / Case:SOT-89; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Power Bipolar

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