Optek OPB830W51Z
$ 5.42
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginMexico
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
OptekOPB840W55Z
880nm Through-Beam 3.18mm 20ms Phototransistor 30V wire mounting，base mount 16.13mm(height)
OptekOPB831W55Z
880nm Through-Beam 3.18mm 10ms Phototransistor wire mounting，base mount 16.13mm(height)
OptekOPB830W55Z
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 16.13mm(height)
Descriptions
Descriptions of Optek OPB830W51Z provided by its distributors.
880nm Through-Beam 3.18mm 20ms Phototransistor wire mounting，base mount 24mm*13.21mm*16.13mm
Photointerrupter Transmissive 2.03 mm Phototransistor 4-Pin Slotted Optical Switch
Optical Switches, Transmissive, Phototransistor Output Slotted Opt Switch
Transistor Output Slotted Switch, 1-Channel, 3.18mm Slot Width
OPB830W51Z SCREW MOUNT SLOTTED OPTICAL SWITCH, TRANSISTOR OUTPUT
OPB830W Series 880 nm 50 mA Chassis Mount Phototransistor
Optek OPB830W51Z 透過形フォトマイクロセンサ
SENSOR OPT SLOT PHOTOTRANS MODUL
PHOTO INTERRUPTER, THROUGH BEAM, 3.18MM; Sensor Output:Phototransistor; Sensor Mounting:Panel / Chassis; Gap Width:3.18mm; Aperture Width:1.27mm; Forward Current If:50mA; Reverse Voltage Vr:2V; Forward Voltage:1.7V; Product RoHS Compliant: Yes
Manufacturer Aliases
Optek has several brands around the world that distributors may use as alternate names. Optek may also be known as the following names:
- OPTEK TECHNOLOGY
- TT Electronics/Optek Technology
- OPTEK TECHNOLOGY INC
- OPT
- OPTE
- OPTEK TECH
- OPTEC
- OPTK
- Optek / TT Electronics
- Optek Technology/TT Electronics
- TT Electronics - Optek
- TT Optek
- OPTEK TEC
- OPTEK Technologies
- C- OPTEK
- OPTEK TECHNOLOG
- C-OPTEKTECH
- OPTEK MIL
- OPTEK TECH INC
- Kyocera Optrex
- BEDFORD OPTO TECHNOLOGY LTD
- OPTEK INC
Technical Specifications
Physical
MountChassis Mount, Screw
Number of Pins4
Technical
Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Dark Current100 nA
Forward Current50 mA
Forward Voltage1.7 V
Input Current20 mA
Max Breakdown Voltage30 V
Max Collector Current30 mA
Max Operating Temperature80 °C
Min Operating Temperature-40 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Voltage30 V
PackagingBulk
Power Dissipation100 mW
Reverse Breakdown Voltage2 V
Reverse Voltage (DC)2 V
Sensing Distance3.175 mm
TouchscreenInfrared (IR)
Wavelength880 nm
Dimensions
Height10.54 mm
Length23.75 mm
Width6.35 mm