onsemi TIP122
Obsolete
CAD Models
Download onsemi TIP122 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.276
$ 0.276
Stock
6,206,823
582,342
582,342
Authorized Distributors
2
6
6
Mount
Through Hole
-
-
Case/Package
TO-220
TO-220-3
TO-220-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
5 A
5 A
5 A
Transition Frequency
2 MHz
4 MHz
4 MHz
Collector Emitter Saturation Voltage
2 V
2 V
2 V
hFE Min
1000
1000
1000
Power Dissipation
2 W
2 W
2 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1991-04-24
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2009-12-19
LTD Date2010-06-19
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
Descriptions
Descriptions of onsemi TIP122 provided by its distributors.
Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 3A 3V 5A 2W 100V
5.0 A, 100 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Darlington Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:65W; DC Current Gain Min (hfe):1000; Package/Case:TO-220; C-E Breakdown Voltage:100V; DC Collector Current:5A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:2W; DC Collector Current:5A; DC Current Gain hFE:1000; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:2V; Current Ic Continuous a Max:5A; Hfe Min:1000; Package / Case:TO-220; Power Dissipation Pd:2W; Termination Type:Through Hole
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.214012 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current5 A
Current5 A
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min1000
Max Breakdown Voltage100 V
Max Collector Current5 A
Max Operating Temperature150 °C
Max Power Dissipation65 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation2 W
Transition Frequency2 MHz
Voltage100 V
Voltage Rating (DC)100 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements